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Showing items 21-30 of 121  (13 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:44:15Z Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH
國立交通大學 2014-12-08T15:43:58Z On-chip ESD protection design by using polysilicon diodes in CMOS process Ker, MD; Chen, TY; Wang, TH; Wu, CY
國立交通大學 2014-12-08T15:43:09Z Inequalities between Dirichlet and Neumann eigenvalues for domains in spheres Hsu, YJ; Wang, TH
國立交通大學 2014-12-08T15:43:07Z A global pinching theorem for surfaces with constant mean curvature in S-3 Hsu, YJ; Wang, TH
國立交通大學 2014-12-08T15:42:55Z Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH
國立交通大學 2014-12-08T15:42:37Z Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學 2014-12-08T15:41:47Z Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices Wang, TH; Zous, NK; Yeh, CC
國立交通大學 2014-12-08T15:41:10Z A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY
國立交通大學 2014-12-08T15:41:07Z Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias Tsai, CW; Chen, MC; Ku, SH; Wang, TH
國立交通大學 2014-12-08T15:39:34Z Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY

Showing items 21-30 of 121  (13 Page(s) Totally)
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