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"wang th"
Showing items 31-40 of 121 (13 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell
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Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:41Z |
Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:37Z |
A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Field enhanced oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC |
Showing items 31-40 of 121 (13 Page(s) Totally)
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