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Taiwan Academic Institutional Repository >
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"wang th"
Showing items 36-85 of 121 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Field enhanced oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC |
| 國立交通大學 |
2014-12-08T15:27:30Z |
A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET
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Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:29Z |
Investigation of oxide charge trapping and detrapping in a n-MOSFET
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Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:27Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique
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Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:15Z |
Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
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Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:09Z |
A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
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Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:38Z |
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
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Chen, MC; Tsai, CW; Gu, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:26:23Z |
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs
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Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
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Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:57Z |
Multi-level memory systems using error control codes
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Chang, HC; Lin, CC; Hsiao, TY; Wu, JT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:49Z |
Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
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Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
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Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping
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Chan, CT; Ma, HC; Tang, CJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel fully CMOS process compatible PREM for SOC applications
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:19:29Z |
A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory
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Tsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY |
| 國立交通大學 |
2014-12-08T15:18:45Z |
Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors
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Chiang, S; Lu, MF; Huang-Lu, S; Chien, SC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:17:56Z |
Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design
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Lin, MH; Lin, YL; Chen, JM; Yeh, MS; Chang, KP; Su, KC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:17:37Z |
Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique
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Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:29Z |
Copper interconnect electromigration behavior in various structures and precise bimodal fitting
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Lin, MH; Lin, YL; Chang, KP; Sul, KC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:17:01Z |
A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming
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Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:00Z |
Molecular epidemiology of long-term colonization of Candida albicans strains from HIV-infected patients
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Li, SY; Yang, YL; Chen, KW; Cheng, HH; Chiou, CS; Wang, TH; Lauderdale, TL; Hung, CC; Lo, HJ |
| 國立交通大學 |
2014-12-08T15:16:38Z |
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient
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Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:05:43Z |
INVESTIGATIONS OF COMPLEX-MODES IN A GENERALIZED BILATERAL FINLINE WITH MOUNTING GROOVES AND FINITE CONDUCTOR THICKNESS
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WANG, WK; TZUANG, CK; CHANG, JS; WANG, TH |
| 國立交通大學 |
2014-12-08T15:05:32Z |
ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS
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WANG, TH; YU, CC |
| 國立交通大學 |
2014-12-08T15:05:30Z |
NUMERICAL-ANALYSIS OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
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WANG, TH; HSIEH, CH |
| 國立交通大學 |
2014-12-08T15:05:10Z |
MIXED-MODE SIMULATION OF DX TRAP-INDUCED SLOW TRANSIENT EFFECTS ON ALGAAS GAAS HEMT INVERTERS
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WANG, TH |
| 國立交通大學 |
2014-12-08T15:04:50Z |
POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK
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LOONG, WA; WANG, TH |
| 國立交通大學 |
2014-12-08T15:04:45Z |
QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY
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WANG, TH; HSIEH, TH; CHEN, YT |
| 國立交通大學 |
2014-12-08T15:04:44Z |
MODELING HOT-ELECTRON GATE CURRENT IN SI MOSFETS USING A COUPLED DRIFT-DIFFUSION AND MONTE-CARLO METHOD
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HUANG, CM; WANG, TH; CHEN, CN; CHANG, MC; FU, J |
| 國立交通大學 |
2014-12-08T15:04:26Z |
QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY
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WANG, TH; HSIEH, TH; CHEN, TW |
| 國立交通大學 |
2014-12-08T15:04:23Z |
CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS
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LIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J |
| 國立交通大學 |
2014-12-08T15:04:18Z |
DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
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WANG, TH; WU, SJ; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:03:47Z |
EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
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WANG, TH; HUANG, CM; CHOU, PC; CHUNG, SSS; CHANG, TE |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:40Z |
INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
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WANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
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HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:27Z |
MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS
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CHANG, TE; HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:26Z |
AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION
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HSIEH, TH; WANG, H; WANG, TH; CHEN, TH; CHIANG, YC; TSENG, ST; CHEN, A; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:03:19Z |
CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:02Z |
STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM; YANG, JY; CHANG, KM; CHIANG, LP |
| 國立交通大學 |
2014-12-08T15:02:57Z |
Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure
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Liou, TS; Wang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:28Z |
A new technique to extract oxide trap time constants in MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:01:31Z |
Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient
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Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C |
Showing items 36-85 of 121 (3 Page(s) Totally)
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