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"wang th"
Showing items 41-50 of 121 (13 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:27:30Z |
A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET
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Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:29Z |
Investigation of oxide charge trapping and detrapping in a n-MOSFET
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Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:27Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique
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Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:15Z |
Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
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Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:09Z |
A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
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Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:38Z |
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
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Chen, MC; Tsai, CW; Gu, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:26:23Z |
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs
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Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
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Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:57Z |
Multi-level memory systems using error control codes
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Chang, HC; Lin, CC; Hsiao, TY; Wu, JT; Wang, TH |
Showing items 41-50 of 121 (13 Page(s) Totally)
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