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Showing items 51-60 of 121  (13 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:25:49Z Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學 2014-12-08T15:25:47Z Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:25:27Z Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping Chan, CT; Ma, HC; Tang, CJ; Wang, TH
國立交通大學 2014-12-08T15:19:37Z A novel fully CMOS process compatible PREM for SOC applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY
國立交通大學 2014-12-08T15:19:29Z A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:18:55Z Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory Tsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY
國立交通大學 2014-12-08T15:18:45Z Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors Chiang, S; Lu, MF; Huang-Lu, S; Chien, SC; Wang, TH
國立交通大學 2014-12-08T15:18:29Z Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH
國立交通大學 2014-12-08T15:17:56Z Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design Lin, MH; Lin, YL; Chen, JM; Yeh, MS; Chang, KP; Su, KC; Wang, TH
國立交通大學 2014-12-08T15:17:37Z Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY

Showing items 51-60 of 121  (13 Page(s) Totally)
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