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Showing items 56-80 of 118  (5 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:17:29Z Copper interconnect electromigration behavior in various structures and precise bimodal fitting Lin, MH; Lin, YL; Chang, KP; Sul, KC; Wang, TH
國立交通大學 2014-12-08T15:17:01Z A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:17:00Z Molecular epidemiology of long-term colonization of Candida albicans strains from HIV-infected patients Li, SY; Yang, YL; Chen, KW; Cheng, HH; Chiou, CS; Wang, TH; Lauderdale, TL; Hung, CC; Lo, HJ
國立交通大學 2014-12-08T15:16:38Z A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD
國立交通大學 2014-12-08T15:05:43Z INVESTIGATIONS OF COMPLEX-MODES IN A GENERALIZED BILATERAL FINLINE WITH MOUNTING GROOVES AND FINITE CONDUCTOR THICKNESS WANG, WK; TZUANG, CK; CHANG, JS; WANG, TH
國立交通大學 2014-12-08T15:05:32Z ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS WANG, TH; YU, CC
國立交通大學 2014-12-08T15:05:30Z NUMERICAL-ANALYSIS OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS WANG, TH; HSIEH, CH
國立交通大學 2014-12-08T15:05:10Z MIXED-MODE SIMULATION OF DX TRAP-INDUCED SLOW TRANSIENT EFFECTS ON ALGAAS GAAS HEMT INVERTERS WANG, TH
國立交通大學 2014-12-08T15:04:50Z POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK LOONG, WA; WANG, TH
國立交通大學 2014-12-08T15:04:45Z QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY WANG, TH; HSIEH, TH; CHEN, YT
國立交通大學 2014-12-08T15:04:44Z MODELING HOT-ELECTRON GATE CURRENT IN SI MOSFETS USING A COUPLED DRIFT-DIFFUSION AND MONTE-CARLO METHOD HUANG, CM; WANG, TH; CHEN, CN; CHANG, MC; FU, J
國立交通大學 2014-12-08T15:04:26Z QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY WANG, TH; HSIEH, TH; CHEN, TW
國立交通大學 2014-12-08T15:04:23Z CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS LIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J
國立交通大學 2014-12-08T15:04:18Z DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS WANG, TH; WU, SJ; HUANG, CM
國立交通大學 2014-12-08T15:03:47Z EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS WANG, TH; HUANG, CM; CHOU, PC; CHUNG, SSS; CHANG, TE
國立交通大學 2014-12-08T15:03:44Z CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE LIOU, TS; WANG, TH; CHANG, CY
國立交通大學 2014-12-08T15:03:40Z INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS WANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY
國立交通大學 2014-12-08T15:03:33Z TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL HUANG, CM; WANG, TH
國立交通大學 2014-12-08T15:03:27Z MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS CHANG, TE; HUANG, CM; WANG, TH
國立交通大學 2014-12-08T15:03:26Z AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION HSIEH, TH; WANG, H; WANG, TH; CHEN, TH; CHIANG, YC; TSENG, ST; CHEN, A; CHANG, EY
國立交通大學 2014-12-08T15:03:19Z CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS LIOU, TS; WANG, TH; CHANG, CY
國立交通大學 2014-12-08T15:03:02Z STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS WANG, TH; CHANG, TE; HUANG, CM; YANG, JY; CHANG, KM; CHIANG, LP
國立交通大學 2014-12-08T15:02:57Z Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure Liou, TS; Wang, TH; Chang, CY
國立交通大學 2014-12-08T15:02:28Z A new technique to extract oxide trap time constants in MOSFET's Wang, TH; Chang, TE; Chiang, LP; Huang, C
國立交通大學 2014-12-08T15:01:31Z Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C

Showing items 56-80 of 118  (5 Page(s) Totally)
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