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机构 日期 题名 作者
國立交通大學 2014-12-08T15:42:37Z Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學 2014-12-08T15:41:47Z Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices Wang, TH; Zous, NK; Yeh, CC
國立交通大學 2014-12-08T15:41:10Z A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY
國立交通大學 2014-12-08T15:41:07Z Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias Tsai, CW; Chen, MC; Ku, SH; Wang, TH
國立交通大學 2014-12-08T15:39:34Z Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY
國立交通大學 2014-12-08T15:39:14Z An endurance evaluation method for flash EEPROM Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY
國立交通大學 2014-12-08T15:38:52Z Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:38:44Z Pocket implantation effect on drain current flicker noise in analog nMOSFET devices Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH
國立交通大學 2014-12-08T15:38:41Z Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors Chen, MC; Ku, SH; Chan, CT; Wang, TH
國立交通大學 2014-12-08T15:38:37Z A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY

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