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"wang th"的相關文件
顯示項目 71-80 / 121 (共13頁) << < 3 4 5 6 7 8 9 10 11 12 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:04:44Z |
MODELING HOT-ELECTRON GATE CURRENT IN SI MOSFETS USING A COUPLED DRIFT-DIFFUSION AND MONTE-CARLO METHOD
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HUANG, CM; WANG, TH; CHEN, CN; CHANG, MC; FU, J |
| 國立交通大學 |
2014-12-08T15:04:26Z |
QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY
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WANG, TH; HSIEH, TH; CHEN, TW |
| 國立交通大學 |
2014-12-08T15:04:23Z |
CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS
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LIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J |
| 國立交通大學 |
2014-12-08T15:04:18Z |
DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
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WANG, TH; WU, SJ; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:03:47Z |
EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
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WANG, TH; HUANG, CM; CHOU, PC; CHUNG, SSS; CHANG, TE |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:40Z |
INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
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WANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
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HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:27Z |
MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS
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CHANG, TE; HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:26Z |
AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION
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HSIEH, TH; WANG, H; WANG, TH; CHEN, TH; CHIANG, YC; TSENG, ST; CHEN, A; CHANG, EY |
顯示項目 71-80 / 121 (共13頁) << < 3 4 5 6 7 8 9 10 11 12 > >> 每頁顯示[10|25|50]項目
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