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Showing items 16-65 of 121 (3 Page(s) Totally)
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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:48:54Z	Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique	Wang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM
國立交通大學	2014-12-08T15:48:47Z	Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique	Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C
國立交通大學	2014-12-08T15:46:18Z	Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides	Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM
國立交通大學	2014-12-08T15:46:14Z	A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's	Wang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS
國立交通大學	2014-12-08T15:44:34Z	Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology	Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH
國立交通大學	2014-12-08T15:44:15Z	Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction	Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH
國立交通大學	2014-12-08T15:43:58Z	On-chip ESD protection design by using polysilicon diodes in CMOS process	Ker, MD; Chen, TY; Wang, TH; Wu, CY
國立交通大學	2014-12-08T15:43:09Z	Inequalities between Dirichlet and Neumann eigenvalues for domains in spheres	Hsu, YJ; Wang, TH
國立交通大學	2014-12-08T15:43:07Z	A global pinching theorem for surfaces with constant mean curvature in S-3	Hsu, YJ; Wang, TH
國立交通大學	2014-12-08T15:42:55Z	Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices	Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH
國立交通大學	2014-12-08T15:42:37Z	Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage	Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學	2014-12-08T15:41:47Z	Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices	Wang, TH; Zous, NK; Yeh, CC
國立交通大學	2014-12-08T15:41:10Z	A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories	Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY
國立交通大學	2014-12-08T15:41:07Z	Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias	Tsai, CW; Chen, MC; Ku, SH; Wang, TH
國立交通大學	2014-12-08T15:39:34Z	Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell	Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY
國立交通大學	2014-12-08T15:39:14Z	An endurance evaluation method for flash EEPROM	Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY
國立交通大學	2014-12-08T15:38:52Z	Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell	Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY
國立交通大學	2014-12-08T15:38:44Z	Pocket implantation effect on drain current flicker noise in analog nMOSFET devices	Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH
國立交通大學	2014-12-08T15:38:41Z	Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors	Chen, MC; Ku, SH; Chan, CT; Wang, TH
國立交通大學	2014-12-08T15:38:37Z	A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell	Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY
國立交通大學	2014-12-08T15:38:37Z	Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology	Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY
國立交通大學	2014-12-08T15:38:31Z	Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors	Chen, MC; Ku, SH; Chan, CT; Wang, TH
國立交通大學	2014-12-08T15:27:51Z	INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS	WANG, TH; CHANG, TE; HUANG, CM
國立交通大學	2014-12-08T15:27:37Z	Field enhanced oxide charge detrapping in n-MOSFET's	Wang, TH; Chang, TE; Chiang, LP; Huang, C
國立交通大學	2014-12-08T15:27:37Z	Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's	Wang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC
國立交通大學	2014-12-08T15:27:30Z	A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET	Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C
國立交通大學	2014-12-08T15:27:29Z	Investigation of oxide charge trapping and detrapping in a n-MOSFET	Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C
國立交通大學	2014-12-08T15:27:27Z	Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique	Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C
國立交通大學	2014-12-08T15:27:15Z	Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET	Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY
國立交通大學	2014-12-08T15:27:09Z	A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides	Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM
國立交通大學	2014-12-08T15:26:57Z	Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs	Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC
國立交通大學	2014-12-08T15:26:38Z	Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs	Chen, MC; Tsai, CW; Gu, SH; Wang, TH
國立交通大學	2014-12-08T15:26:23Z	Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs	Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學	2014-12-08T15:26:17Z	Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology	Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:25:57Z	Multi-level memory systems using error control codes	Chang, HC; Lin, CC; Hsiao, TY; Wu, JT; Wang, TH
國立交通大學	2014-12-08T15:25:49Z	Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs	Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學	2014-12-08T15:25:47Z	Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique	Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY
國立交通大學	2014-12-08T15:25:27Z	Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping	Chan, CT; Ma, HC; Tang, CJ; Wang, TH
國立交通大學	2014-12-08T15:19:37Z	A novel fully CMOS process compatible PREM for SOC applications	Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY
國立交通大學	2014-12-08T15:19:29Z	A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications	Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學	2014-12-08T15:18:55Z	Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory	Tsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY
國立交通大學	2014-12-08T15:18:45Z	Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors	Chiang, S; Lu, MF; Huang-Lu, S; Chien, SC; Wang, TH
國立交通大學	2014-12-08T15:18:29Z	Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling	Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH
國立交通大學	2014-12-08T15:17:56Z	Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design	Lin, MH; Lin, YL; Chen, JM; Yeh, MS; Chang, KP; Su, KC; Wang, TH
國立交通大學	2014-12-08T15:17:37Z	Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique	Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學	2014-12-08T15:17:29Z	Copper interconnect electromigration behavior in various structures and precise bimodal fitting	Lin, MH; Lin, YL; Chang, KP; Sul, KC; Wang, TH
國立交通大學	2014-12-08T15:17:01Z	A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming	Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY
國立交通大學	2014-12-08T15:17:00Z	Molecular epidemiology of long-term colonization of Candida albicans strains from HIV-infected patients	Li, SY; Yang, YL; Chen, KW; Cheng, HH; Chiou, CS; Wang, TH; Lauderdale, TL; Hung, CC; Lo, HJ
國立交通大學	2014-12-08T15:16:38Z	A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient	Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD
國立交通大學	2014-12-08T15:05:43Z	INVESTIGATIONS OF COMPLEX-MODES IN A GENERALIZED BILATERAL FINLINE WITH MOUNTING GROOVES AND FINITE CONDUCTOR THICKNESS	WANG, WK; TZUANG, CK; CHANG, JS; WANG, TH

Showing items 16-65 of 121 (3 Page(s) Totally)
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