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Showing items 21-45 of 118 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
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Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices
|
Wang, TH; Zous, NK; Yeh, CC |
| 國立交通大學 |
2014-12-08T15:41:10Z |
A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories
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Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias
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Tsai, CW; Chen, MC; Ku, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:39:34Z |
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
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Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell
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Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:41Z |
Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:37Z |
A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Field enhanced oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC |
| 國立交通大學 |
2014-12-08T15:27:30Z |
A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET
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Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:29Z |
Investigation of oxide charge trapping and detrapping in a n-MOSFET
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Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:27Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique
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Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:15Z |
Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
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Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:09Z |
A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
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Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:38Z |
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
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Chen, MC; Tsai, CW; Gu, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:26:23Z |
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs
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Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
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Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:57Z |
Multi-level memory systems using error control codes
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Chang, HC; Lin, CC; Hsiao, TY; Wu, JT; Wang, TH |
Showing items 21-45 of 118 (5 Page(s) Totally)
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