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Showing items 56-80 of 118 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:17:29Z |
Copper interconnect electromigration behavior in various structures and precise bimodal fitting
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Lin, MH; Lin, YL; Chang, KP; Sul, KC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:17:01Z |
A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming
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Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:00Z |
Molecular epidemiology of long-term colonization of Candida albicans strains from HIV-infected patients
|
Li, SY; Yang, YL; Chen, KW; Cheng, HH; Chiou, CS; Wang, TH; Lauderdale, TL; Hung, CC; Lo, HJ |
| 國立交通大學 |
2014-12-08T15:16:38Z |
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient
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Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:05:43Z |
INVESTIGATIONS OF COMPLEX-MODES IN A GENERALIZED BILATERAL FINLINE WITH MOUNTING GROOVES AND FINITE CONDUCTOR THICKNESS
|
WANG, WK; TZUANG, CK; CHANG, JS; WANG, TH |
| 國立交通大學 |
2014-12-08T15:05:32Z |
ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS
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WANG, TH; YU, CC |
| 國立交通大學 |
2014-12-08T15:05:30Z |
NUMERICAL-ANALYSIS OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
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WANG, TH; HSIEH, CH |
| 國立交通大學 |
2014-12-08T15:05:10Z |
MIXED-MODE SIMULATION OF DX TRAP-INDUCED SLOW TRANSIENT EFFECTS ON ALGAAS GAAS HEMT INVERTERS
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WANG, TH |
| 國立交通大學 |
2014-12-08T15:04:50Z |
POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK
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LOONG, WA; WANG, TH |
| 國立交通大學 |
2014-12-08T15:04:45Z |
QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY
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WANG, TH; HSIEH, TH; CHEN, YT |
| 國立交通大學 |
2014-12-08T15:04:44Z |
MODELING HOT-ELECTRON GATE CURRENT IN SI MOSFETS USING A COUPLED DRIFT-DIFFUSION AND MONTE-CARLO METHOD
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HUANG, CM; WANG, TH; CHEN, CN; CHANG, MC; FU, J |
| 國立交通大學 |
2014-12-08T15:04:26Z |
QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY
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WANG, TH; HSIEH, TH; CHEN, TW |
| 國立交通大學 |
2014-12-08T15:04:23Z |
CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS
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LIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J |
| 國立交通大學 |
2014-12-08T15:04:18Z |
DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
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WANG, TH; WU, SJ; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:03:47Z |
EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
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WANG, TH; HUANG, CM; CHOU, PC; CHUNG, SSS; CHANG, TE |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:40Z |
INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
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WANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
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HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:27Z |
MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS
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CHANG, TE; HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:26Z |
AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION
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HSIEH, TH; WANG, H; WANG, TH; CHEN, TH; CHIANG, YC; TSENG, ST; CHEN, A; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:03:19Z |
CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:02Z |
STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM; YANG, JY; CHANG, KM; CHIANG, LP |
| 國立交通大學 |
2014-12-08T15:02:57Z |
Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure
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Liou, TS; Wang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:28Z |
A new technique to extract oxide trap time constants in MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:01:31Z |
Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient
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Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C |
Showing items 56-80 of 118 (5 Page(s) Totally)
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