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Showing items 76-85 of 121 (13 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:03:44Z |
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
|
LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:40Z |
INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
|
WANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
|
HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:27Z |
MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS
|
CHANG, TE; HUANG, CM; WANG, TH |
| 國立交通大學 |
2014-12-08T15:03:26Z |
AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION
|
HSIEH, TH; WANG, H; WANG, TH; CHEN, TH; CHIANG, YC; TSENG, ST; CHEN, A; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:03:19Z |
CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS
|
LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:02Z |
STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
|
WANG, TH; CHANG, TE; HUANG, CM; YANG, JY; CHANG, KM; CHIANG, LP |
| 國立交通大學 |
2014-12-08T15:02:57Z |
Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure
|
Liou, TS; Wang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:28Z |
A new technique to extract oxide trap time constants in MOSFET's
|
Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:01:31Z |
Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient
|
Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C |
Showing items 76-85 of 121 (13 Page(s) Totally)
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