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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2014-12-08T15:10:30Z Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device Tsai, Ping-Hung; Chang-Liao, Kuei-Shu; Yang, Dong-Wei; Chung, Yuan-Bin; Wang, Tien-Ko; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Tsai, M. J.; Chin, Albert
國立虎尾科技大學 2007 Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices Tsai , Ping-Hung;Chang-Liao, Kuei-Shu;Wang, Tzu-Cheng;Wang, Tien-Ko;Tsai, Chuen-Horng;Cheng, Chin-Lung
國立虎尾科技大學 2007 Reliability and Thermal Stability of Clustered Vertical Furnace-Grown SiO2 With HfxTayN Metal Gate for Advanced MOS Device Application Chang-Liao, Kuei-Shu;Cheng, Chin-Lung;Lu, Chun-Yuan;Sahu, Bhabani Shankar;Wang, Tzu-Chen;Wang, Tien-Ko;Huang, Shang-Feng;Tsai, Wen-Fa;Ai, Chi-Fong
國立虎尾科技大學 2006 Performance improvement of flash memories with HfOxNy/SiO2 stack tunnel dielectrics Lai, Hsiang-Yueh;Liao, Kuei-Shu Chang;Wang, Tien-Ko;Wang, Ping-Kun;Cheng, Chin-Lung
國立虎尾科技大學 2006 Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface Cheng, Chin-Lung;Chang-Liao, Kuei-Shu;Chang, Hsin-Chun;Wang, Tien-Ko
國立虎尾科技大學 2006 Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]Gated MetalOxideSemiconductor Devices by High-Temperature Annealing Cheng, Chin-Lung;Chang-Liao, Kuei-Shu;Wang, Tien-Ko
國立虎尾科技大學 2005 Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching Cheng, Chin-Lung;Chang-Liao, Kuei-Shu;Wang, Tien-Ko

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