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机构 日期 题名 作者
國立交通大學 2017-04-21T06:56:13Z A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applications Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung
國立交通大學 2017-04-21T06:56:07Z A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applications Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung
國立交通大學 2017-04-21T06:49:55Z A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; BrightSky, Matthew; Kim, SangBum; Lung, Hsiang-Lam; Lam, Chung
國立交通大學 2017-04-21T06:49:25Z Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm Lin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan

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