|
"wang w e"的相關文件
顯示項目 11-19 / 19 (共1頁)
1
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
|
Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
|
Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Achieving a low interfacial density of states with a flat distribution in high-K Ga2O3(Gd2O3) directly deposited on Ge
|
Lin, C.;Lin, H.;Chiang, T.;Chu, R.;Chu, L.;Lin, T.;Chang, Y.;Wang, W.-E.;Kwo, J.R.;Hong, M.; Lin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Achieving a low interfacial density of states with a flat distribution in high-K Ga2O3(Gd2O3) directly deposited on Ge
|
Lin, C.;Lin, H.;Chiang, T.;Chu, R.;Chu, L.;Lin, T.;Chang, Y.;Wang, W.-E.;Kwo, J.R.;Hong, M.; Lin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
|
Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
|
Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
|
Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
|
Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2017 |
Bilateral robotic priming before task-oriented approach in subacute stroke rehabilitation: A pilot randomized controlled trial
|
Hsieh Y.-W.; Wu C.-Y.; Wang W.-E.; KEH-CHUNG LIN; Chang K.-C.; Chen C.-C.; Liu C.-T.; Hsieh Y.-W.;Wu C.-Y.;Wang W.-E.;Keh-Chung Lin;Chang K.-C.;Chen C.-C.;Liu C.-T. |
顯示項目 11-19 / 19 (共1頁)
1
每頁顯示[10|25|50]項目
|
