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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2018-09-10T08:12:53Z Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:53Z Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:21Z Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8As Chiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG

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