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Showing items 1-24 of 24 (1 Page(s) Totally)
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| 國立成功大學 |
2002-09 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
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Chen, Chun-Yuan; Wang, Wei-Chou; Chiou, Wen-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-08 |
A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior
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Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y. |
| 國立成功大學 |
2001-06 |
On the multiple negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Feng, Shun-Ching; Lin, Kun-Wei; Yu, Kuo-Hui; Laih, Lih-Wen |
| 國立成功大學 |
2001-05 |
Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)
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Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Pan1, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-05 |
Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
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Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-03 |
Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
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Pan, Hsi-Jen; Feng, Shun-Ching; Wang, Wei-Chou; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Laih, Lih-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2001-02 |
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)
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Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Liu, Wen-Chau; Laih, Lin-Wen; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-02 |
Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures
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Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-01 |
Field emission characteristics of carbon nanotube emitters synthesized by arc discharge
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Kwo, Jon-Lian; Tsou, C. C.; Yokoyama, Meiso; Lin, I-Nan; Lee, Cheng-Chung; Wang, Wei-Chou; Chuang, Feng-Yu |
| 國立成功大學 |
2000-12 |
Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
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Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-09 |
Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor
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Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-08 |
Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
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Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-07 |
A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
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Liu, Wen-Chau; Thei, Kong-Beng; Wang, Wei-Chou; Pan, Hsi-Jen; Wuu, Shou-Gwo; Lei, Ming-Ta; Wang, Chung-Shu; Cheng, Shiou-Ying |
| 國立成功大學 |
2000-04 |
Characteristics of flat panel display using carbon nanotubes as electron emitters
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Kwo, Jon-Lian; Yokoyama, Meiso; Wang, Wei-Chou; Chuang, Feng-Yu; Lin, I-Nan |
| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
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Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-07-26 |
Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-07-05 |
Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
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Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-05-21 |
A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)
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Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
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Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1998-06 |
Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor
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Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
Showing items 1-24 of 24 (1 Page(s) Totally)
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