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Showing items 21-24 of 24  (1 Page(s) Totally)
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Institution Date Title Author
國立成功大學 1999-06 Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen
國立成功大學 1999-05-21 A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3) Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau
國立成功大學 1999-04-12 Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou
國立成功大學 1998-06 Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau

Showing items 21-24 of 24  (1 Page(s) Totally)
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