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"wang wei kai"的相关文件
显示项目 26-35 / 53 (共6页)
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| 大葉大學 |
2016-04 |
1.48-kV enhancement-mode AlGaN/GaN high electron mobility transistors fabricated on 6-in silicon by using fluoride-based plasma treatment
|
Yeh, Chih-Tung;Wang, Wei-Kai;Shen, Yi-Siang;Horng, Ray-Hua |
| 淡江大學 |
2016 |
使用區域型地圖改善機器人定位與建圖任務
|
王威凱;Wang, Wei-Kai |
| 大葉大學 |
2015-11-15 |
A comparative study of GaN films grown on different substrates by pulsed laser deposition
|
Wang, Wei-Kai |
| 大葉大學 |
2015-11-15 |
Comparative study of the characteristics of atmospheric plasma-sprayed YF3 and Y2O3 coatings
|
Wang, Wei-Kai |
| 大葉大學 |
2015-11-15 |
Properties of GaN Decomposition in Atmospheric Pressures
|
Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung |
| 大葉大學 |
2015-11-15 |
Microstructure of GaN films grown on Si(100) and Si(111) substrates by pulsed laser deposition
|
Huang, Shih-Yung;Wang, Wei-Kai;Wuu, Dong-Sing |
| 大葉大學 |
2015-11-08 |
Mechanism of stress controlling of GaN on Si by AlN insertion layer
|
Lin, Po-Rung;Huang, Shih-Yung;Wang, Wei-Kai;Wuu, Dong-Sing |
| 大葉大學 |
2015-11 |
Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice
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Lina, Po-Jung;Huang, Shih-Yung;Wang, Wei-Kai;Chen, Che-Lin;Chung, Bu-Chin;Wuu, Dong-Sing |
| 大葉大學 |
2015-08-30 |
COMPARISON OF GAN FILMS GROWN ON SILICON(111) AND SILICON(100) SUBSTRATES BY PULSED LASER DEPOSITION
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Wang, Wei-Kai;Huang, Shih-Yung;Hrong, Ray-Hua |
| 大葉大學 |
2015-08-30 |
STUDY OF A GAN-BASED LED SUBSTRATE RECLAIMED TECHNOLOGIES
|
Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung |
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