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"wang yh"
Showing items 171-180 of 350 (35 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:45Z |
Study of annealing and exchange bias effects in PtMn based magnetic tunnel junction system
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Peng, TY; Yao, YD; Chen, SY; Wang, YH; Chen, WC; Gao, MJ; Tang, DD |
| 國立交通大學 |
2014-12-08T15:18:34Z |
A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs
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Cho, MH; Huang, GW; Wu, LK; Chiu, CS; Wang, YH; Chen, KM; Tsen, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:20Z |
A scalable noise de-embedding technique for on-wafer microwave device characterization
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Cho, MH; Huang, GW; Wang, YH; Wu, LK |
| 國立交通大學 |
2014-12-08T15:05:52Z |
NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
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YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:48Z |
ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
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WU, JS; CHANG, CY; LEE, CP; WANG, YH; KAI, F |
| 國立交通大學 |
2014-12-08T15:05:46Z |
GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
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YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:43Z |
A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
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WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:38Z |
A TRISTATE SWITCH USING TRIANGULAR BARRIERS
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WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES
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WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY
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WANG, YH; YARN, KF; CHANG, CY |
Showing items 171-180 of 350 (35 Page(s) Totally)
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