|
English
|
正體中文
|
简体中文
|
總筆數 :0
|
|
造訪人次 :
52209545
線上人數 :
1273
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"wang yh"的相關文件
顯示項目 176-185 / 350 (共35頁)
<< < 13 14 15 16 17 18 19 20 21 22 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:05:46Z |
GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:43Z |
A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:38Z |
A TRISTATE SWITCH USING TRIANGULAR BARRIERS
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
|
YARN, KF; WANG, YH; CHANG, CY; CHANG, CS |
| 國立交通大學 |
2014-12-08T15:05:31Z |
CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:25Z |
MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR
|
YARN, KF; CHANG, CY; WANG, YH; WANG, RL |
顯示項目 176-185 / 350 (共35頁)
<< < 13 14 15 16 17 18 19 20 21 22 > >>
每頁顯示[10|25|50]項目
|
