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Showing items 66-75 of 126  (13 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:17:18Z Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping process Chen, YM; Tu, GC; Wang, YL
國立交通大學 2014-12-08T15:17:12Z Comparison of characteristics and integration of copper diffusion-barrier dielectrics Wang, TC; Cheng, YL; Wang, YL; Hsieh, TE; Hwang, GJ; Chen, CF
國立交通大學 2014-12-08T15:17:12Z Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology Chen, KW; Wang, YL; Liu, CP; Chang, L; Li, FY
國立交通大學 2014-12-08T15:17:12Z High-selectivity damascene chemical mechanical polishing Chiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF
國立交通大學 2014-12-08T15:02:02Z Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes Tseng, WT; Wang, YL
國立交通大學 2014-12-08T15:01:30Z Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement Wang, YL; Tseng, WT; Feng, MS
國立交通大學 2014-12-08T15:01:23Z Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology Wang, YL; Liu, C; Feng, MS; Dun, JW; Chou, KS
國立交通大學 2014-12-08T15:01:23Z Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity Wang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT
國立交通大學 2014-12-08T15:01:09Z The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection Wang, YL; Liu, C; Feng, MS; Tseng, WT
國立交通大學 2014-12-08T15:01:09Z A modified multi-chemicals spray cleaning process for post-CMP cleaning application Wang, YL; Liu, C; Feng, MS; Tseng, WT

Showing items 66-75 of 126  (13 Page(s) Totally)
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