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"wang yl"的相關文件
顯示項目 31-55 / 126 (共6頁) << < 1 2 3 4 5 6 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:43:16Z |
Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic process
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Lan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:43Z |
Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
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Lan, JK; Wang, YL; Chao, CG; Lo, K; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:27Z |
Mechanisms of circular defects for shallow trench isolation oxide deposition
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Lan, JK; Wang, YL; Liu, CP; Chao, CG; Ay, CY; Liu, CW; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
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Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:46Z |
Pattern-dependent copper microcorrosion from CMP
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Chen, KW; Wang, YL; Chang, L; Chang, SC; Li, FY; Lin, SH |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
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Chen, KW; Wang, YL; Liu, CP; Yang, K; Chang, L; Lo, KY; Liu, CW |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Copper surface protection with a completely enclosed copper structure for a damascene process
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Wang, TC; Hsieh, TE; Wang, YL; Wu, YL; Lo, KY; Liu, CW; Chen, KW |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Study on precipitations of fluorine-doped silicon oxide
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Wu, J; Wang, YL; Liu, CP; Chang, SC; Kuo, CT; Ay, C |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner
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Lan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:39Z |
Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation
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Chang, JJ; Liu, CP; Chen, SW; Chang, CC; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Stress migration and electromigration improvement for copper dual damascene interconnection
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Wang, TC; Hsieh, TE; Wang, MT; Su, DS; Chang, CH; Wang, YL; Lee, JYM |
| 國立交通大學 |
2014-12-08T15:35:42Z |
Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface
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Chang, JJ; Hsieh, TE; Wang, YL; Tseng, WT; Liu, CP; Lan, CY |
| 國立交通大學 |
2014-12-08T15:26:47Z |
Novel strategies of FSG-CMP for within-wafer uniformity improvement and wafer edge yield enhancement beyond 0.18 micro technologies
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Chen, KW; Wang, YL; Chang, L; Liu, CW; Lin, YK; Wang, TC; Chang, ST; Lo, KY |
| 國立交通大學 |
2014-12-08T15:19:22Z |
Formation of pyramid-like nanostructures during cobalt film growth by magnetron sputtering
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Liu, CP; Chang, JJ; Chen, SW; Chung, HC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
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Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:18:36Z |
Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping
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Chang, JJ; Liu, CP; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:41Z |
CoSix thermal stability on narrow-width polysilicon resistors
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Chen, YM; Tu, GC; Wang, YL; Hwang, GJ; Lo, CY |
顯示項目 31-55 / 126 (共6頁) << < 1 2 3 4 5 6 > >> 每頁顯示[10|25|50]項目
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