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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-12T01:25:14Z |
氮化銦鎵/氮化鎵量子井聯合能態密度的變化及V型結構對元件特性的影響
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王俞授; Wang, Yu-Shou; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:22:53Z |
Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance
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Hsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chiang, Chen-Hao; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Role of the N-related localized states in the electron emission properties of a GaAsN quantum well
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Hsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chen, Ross C. C.; Chiang, Chen-Hao; Chen, Yung-Fu; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:20:34Z |
Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes
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Wang, Yu-Shou; Chen, Nai-Chuan; Lu, Chun-Yi; Chen, Jenn-Fang |
Showing items 1-4 of 4 (1 Page(s) Totally)
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