國立交通大學 |
2020-07-01T05:22:05Z |
Experimental Study of 1/f(1+alpha) Noise in Transient Leakage Current of Metal-Insulator-Metal With Stacked High-k Polycrystalline Films
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Lin, Hsin-Jyun; Akiyama, Koji; Hirota, Yoshihiro; Akasaka, Yasushi; Nakamura, Genji; Nagai, Hiroyuki; Morimoto, Tamotsu; Watanabe, Hiroshi |
國立交通大學 |
2019-10-05T00:08:40Z |
Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale
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Chih-Wei, Yao; Sano, Nobuyuki; Watanabe, Hiroshi |
國立交通大學 |
2019-04-02T06:00:48Z |
Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices
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Sano, Nobuyuki; Yoshida, Katsuhisa; Yao, Chih-Wei; Watanabe, Hiroshi |
國立交通大學 |
2019-04-02T06:00:28Z |
A Tight Binding Method Study of Optimized Si-SiO2 System
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Watanabe, Hiroshi; Kawabata, Kenji; Ichikawa, Takashi |
國立交通大學 |
2019-04-02T05:59:13Z |
Three-dimensional device simulation of random telegraph noise spectroscopy with Coulomb energy variation of the trap in high-k gate oxide
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Lin, Po-Jui; Su, Chong-Zih; Yao, Chih-Wei; Watanabe, Hiroshi |
國立交通大學 |
2019-04-02T05:58:25Z |
Universal Tunnel Mass and Charge Trapping in [(SiO2)(1-x)(Si3N4)(x)](1-y)Si-y Film
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Watanabe, Hiroshi; Matsushita, Daisuke; Muraoka, Kouichi; Kato, Koichi |
國立交通大學 |
2018-08-21T05:56:25Z |
Monte-Carlo Simulation of Biomolecules' Fluid-Dynamics in Electrolyte Facing Nanowires Biosensor
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Lee, Che-An; Teramoto, Akinobu; Watanabe, Hiroshi |
國立交通大學 |
2018-08-21T05:54:20Z |
Localized Tunneling Phenomena of Nanometer Scaled High-K Gate-Stack
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Lin, Po-Jui Jerry; Lee, Che-An Andy; Yao, Chih-Wei Kira; Lin, Hsin-Jyun Vincent; Watanabe, Hiroshi |
國立交通大學 |
2018-08-21T05:53:35Z |
Monte Carlo Simulation of Nanowires Array Biosensor With AC Electroosmosis
|
Lee, Che-An; Teramoto, Akinobu; Watanabe, Hiroshi |
國立交通大學 |
2016-03-28T00:05:42Z |
Nano-meter Scaled Gate Area High-K Dielectrics with Trap-Assisted Tunneling and Random Telegraph Noise
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Lin, Po-Jui Jerry; Lee, Zhe-An Andy; Yao, Chih-Wei Kira; Lin, Hsin-Jyun Vincent; Watanabe, Hiroshi |
國立交通大學 |
2014-12-16T06:15:02Z |
APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE
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Shirota Riichiro; Watanabe Hiroshi |
國立交通大學 |
2014-12-12T02:44:41Z |
氧化層電場對NAND快閃記憶體保存度影響之研究
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陳玄澤; Chen, Hsuan-Tse; 渡邊浩志; Watanabe, Hiroshi |
國立交通大學 |
2014-12-12T02:44:37Z |
三維多體陷阱模擬
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林鑫均; Lin, Sin-Jyun; 渡邊浩志; Watanabe, Hiroshi |
國立交通大學 |
2014-12-12T02:36:25Z |
奈米尺度物理模擬器之發展
|
姚智偉; Yao, Chih-Wei; 渡邊浩志; Watanabe Hiroshi |
國立交通大學 |
2014-12-12T01:56:17Z |
P型SONOS快閃記憶體元件電荷動態分佈之研究
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邱勇岳; Chiu, Yung-Yueh; 渡邊浩志; Watanabe, Hiroshi |
國立交通大學 |
2014-12-08T15:48:37Z |
Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
|
Watanabe, Hiroshi |
國立交通大學 |
2014-12-08T15:47:55Z |
A Tight Binding Method Study of Optimized Si-SiO(2) System
|
Watanabe, Hiroshi; Kawabata, Kenji; Ichikawa, Takashi |
國立交通大學 |
2014-12-08T15:36:06Z |
Statistical Simulation of Metal-Gate Work-function Fluctuation in High-kappa/Metal-Gate Devices
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Yu, Chia-Hui; Han, Ming-Hung; Cheng, Hui-Wen; Su, Zhong-Cheng; Li, Yiming; Watanabe, Hiroshi |
國立交通大學 |
2014-12-08T15:35:19Z |
Numerical Study of Very Small Floating Islands
|
Watanabe, Hiroshi; Yao, Kira (Chih-Wei); Lin, Jerry (Po-Jui) |
國立交通大學 |
2014-12-08T15:22:31Z |
Quantitative Discussion on Electron-hole Universal Tunnel Mass in Ultrathin Dielectric of Oxide and Oxide-Nitride
|
Watanabe, Hiroshi |
國立交通大學 |
2014-12-08T15:12:04Z |
Integrated Batteryless Electron Timer
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Watanabe, Hiroshi; Ushijima, Tomomi; Hagiwara, Norio; Okada, Chiomi; Tanabe, Takeshi |
國立交通大學 |
2014-12-08T15:06:57Z |
Universal Tunnel Mass and Charge Trapping in [(SiO(2))(1-x)(Si(3)N(4))(x)](1-y)Si(y) Film
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Watanabe, Hiroshi; Matsushita, Daisuke; Muraoka, Kouichi; Kato, Koichi |