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Institution Date Title Author
元智大學 2023-06-28 The Effects of Strain Compensation in Type-II InGaAs/GaAsSb Quantum Wells Grown on GaAs(001) Substrates Samatcha Voranthamrong; Sau-Jia Cheng; Tzi-Wei Luo; Chen-Lun Lee; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 2023-06-28 The Effects of Strain Compensation in Type-II InGaAs/GaAsSb Quantum Wells Grown on GaAs(001) Substrates Samatcha Voranthamrong; Sau-Jia Cheng; Tzi-Wei Luo; Chen-Lun Lee; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 2022-12-02 Optimization of the growth temperature and periods for improving the optical properties of SWIR Type-II super lattice for Infrared Photodetectors Yung-Jyun Liao; Hou-Yi Chen; Pin-Chih Liu; Balaji G; Kai-Yang Hsu; Wei-Sheng Liu; Jen-Inn Chyi
元智大學 2022-12 Optimization of the growth temperature and periods for improving the optical properties of SWIR Type-II super lattice for Infrared Photodetectors Yung-Jyun Liao; Wei-Sheng Liu; Hou-Yi Chen; Pin-Chih Liu; Balaji. G; Kai-Yang Hsu; Jen-Inn Chyi
元智大學 2022-12 Effects of VIII ratios on Size Distribution and Density of InAs/InGaAs Quantum Dots on GaAs Kai-Yang Hsu; Wei-Sheng Liu; Yung-Jyun Liao; Hou-Yi Chen
元智大學 2022-10 Study on CdS and ZnO as Buffer Layers for Solar Cells Shih-Chen Yu; Wei-Sheng Liu; Po-I Lee; Ssu-Chin Tseng
元智大學 2022 Optimal growth conditions for forming c-axis (002) aluminum nitride thin films as a buffer layer for hexagonal gallium nitride thin films produced with in situ continual radio frequency sputtering Wei-Sheng Liu; Balaji. G; Sui-Hua Wu; Li-Cheng Huang; Chung-Kai Chi; Yu-Lun Jiang; Hsing-Chun Kuo
元智大學 2020/12/3 Use of DC reactive magnetron sputtering to grow high-quality AlN on Si<111> substrate Sui-Hua Wu; Wei-Sheng Liu; Yu-Lun Jiang; Chung-Kai Chi
元智大學 2020/12/3 Optical properties of InAs sub-monolayer quantum dots with pentanary InAlGaAsSb capping layer Ming-Hsuan Tsai; Wei-Sheng Liu; Ming-En Hsu; Yong-Zhen Li
元智大學 2020/12/3 Effects of antimony incorporation in the InAlAsSb capping layer for the optical properties of the InAs submonolayer quantum dots Yung-Jyun Liao; Wei-Sheng Liu; Guan-Ru Chen; Li-Cheng Huang

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