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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-20T01:18:42Z |
Voltage control of exchange coupling in phosphorus doped silicon
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Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T05:20:09Z |
Fast donor based electron spin quantum computing
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Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:04Z |
The effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
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Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Hollenberg, L.C.L.;Wellard, C.J.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Hollenberg, L.C.L.; Wellard, C.J.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:03Z |
Voltage control of exchange coupling in phosphorus doped silicon
|
Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:30:48Z |
Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
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Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Wellard, C.J.;Hollenberg, L.C.L.;Pakes, C.I.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Wellard, C.J.; Hollenberg, L.C.L.; Pakes, C.I.; HSI-SHENG GOAN |
| 國立臺灣大學 |
2005 |
Global control and fast solid-state donor electron spin quantum computing
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Hill, C. D.; L. Hollenberg, C. L.; Fowler, A. G.; Wellard, C. J.; Greentree, A. D.; Goan, H.-S. |
Showing items 1-6 of 6 (1 Page(s) Totally)
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