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Showing items 51-75 of 113  (5 Page(s) Totally)
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Institution Date Title Author
國立臺灣海洋大學 2005 Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
義守大學 2004-06 Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications Hung-Ming Chuang ; Shen -Fu, T. ; Kong-Beng Thei ; Po-Hsien Lai ; Ssu-I Fu ; Yan-Ying Tsai ; Wen-Chau Liu ;
義守大學 2004 Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) Chun-Yuan Chen ; Chii-Maw Uang ; Shiou-Ying Cheng ; Hung-Ming Chuang ; Ssu-I Fu ; Ching-Hsiu Tsai ; Chi-Yuan Chang ; Wen-Chau Liu
國立高雄師範大學 2001 On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations Jung-Hui Tsai;Wen-Chau Liu;Kuo-Hui Yu;Kun-Wei Lin;Cheng-Zu Wu;Kuan-Po Lin;Chih-Hung Y; 蔡榮輝
國立高雄師範大學 2001 Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 A new wide voltage operation regime double heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Superlatticed negative differential-resistance heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT) Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT) Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學 1998 Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) Jung-Hui Tsai;Po-Hung Lin;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's) Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;W. L. Chang; 蔡榮輝
國立高雄師範大學 1997 Investigation of step-doped channel heterostructure field-effect transistor Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors Jung-Hui Tsai;Wen-Shiung Lour;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學 1997 InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Po-Hung Lin;Jing-Yuh Chen;Wei-Chou Wang; 蔡榮輝
國立高雄師範大學 1997 InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學 1997 Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學 1997 Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer Jung-Hui Tsai;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure Jung-Hui Tsai;Hui-Jung Shih;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT’s) with multiple carrier confinement heterostructures Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學 1997 Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT’s) Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wei-Chou Wang;Jing-Yuh Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學 1997 Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors Jung-Hui Tsai;Chin-Chuan Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT) Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝

Showing items 51-75 of 113  (5 Page(s) Totally)
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