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Showing items 56-65 of 113  (12 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2001 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 A new wide voltage operation regime double heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Superlatticed negative differential-resistance heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT) Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT) Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學 1998 Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) Jung-Hui Tsai;Po-Hung Lin;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's) Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;W. L. Chang; 蔡榮輝
國立高雄師範大學 1997 Investigation of step-doped channel heterostructure field-effect transistor Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors Jung-Hui Tsai;Wen-Shiung Lour;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝

Showing items 56-65 of 113  (12 Page(s) Totally)
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