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Institution	Date	Title	Author
國立高雄師範大學	2013-10	Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction	Jung-Hui Tsai;Ching-Sung Lee;Jia-Cing Jhou;You-Ren Wu;Chung-Cheng Chiang;Yi-Ting Chao;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2013	Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface	Jung-Hui Tsai;Jian-Kai Liou;Chun-Chia Chen;Po-Cheng Chou;Shiou-Ying Cheng;Rong-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2010-08-18	InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures	Jung-Hui Tsai; Wen-Shiung Lour; Der-Feng Guo; Wen-Chau Liu; Yi-Zhen Wu; Ying-Feng Dai
國立臺灣海洋大學	2010-03	Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor	Jung-Hui Tsai; Wen-Shiung Lour; Chia-Hong Huang; Ning-Feng Dale; Yuan-Hong Lee; Jhih-Syuan Sheng; Wen-Chau Liu
國立高雄師範大學	2010	Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor	Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hong Huang;Ning-Feng Dale;Yuan-Hong Lee;Jhih-Syuan Sheng;Wen-Chau Liu; 黃嘉宏
國立高雄師範大學	2010	InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures	Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu;Yi-Zhen Wu;Ying-Feng Dai; 蔡榮輝
國立臺灣海洋大學	2009-11	Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors	Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
義守大學	2009-04	On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure	Chih-Hung Yen; Yi-Jung Liu;Kuo-Hui Yu;Pei-Ling Lin;Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Nan-Yi Huang; Chong-Yi Lee; Wen-Chau Liu
國立高雄師範大學	2009	InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	Microwave complementary doped-channel field-effect transistors	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Wen-Chau Liu;Chien-Ming Li;Ning-Xing Su;Yi-Zhen Wu;Yin-Shan Huang; 蔡榮輝
國立高雄師範大學	2009	Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	An optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	Low-damage GaN-based light-emitting diodes with KOH treatment	Jung-Hui Tsai;Yi-Jung Liu;Tsung-Yuan Tsai;Wen-Shiung Lour;Chi-Hsiang Hsu;Tai-You Chen;Chien-Chang Huang;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure	Jung-Hui Tsai;Der-Feng Guo;Ning-Xing Su;Yin-Shan Huang;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	SiO2-passivation based hydrogen gas detector	Jung-Hui Tsai;Chung-Fu Chang;Huey-Ing Chen;Kun-Wei Lin;Shiou-Ying Cheng;Jung-Hui Tsai;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	High performance heterostructure transistor with graded-doped sheets	Jung-Hui Tsai;Li-Yang Chen;Chien-Chang Huang;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2009	Microwave complementary doped-channel field-effect transistors	Jung-HuiTsai; Shao-Yen Chiu; Wen-Shiung Lour; Wen-Chau Liu; Chien-Ming Li; Ning-Xing Su; Yi-Zhen Wu; Yin-Shan Huang
國立臺灣海洋大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu
國立臺灣海洋大學	2008-12-09	Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors	Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
義守大學	2008-11	A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure	Chih-Hung Yen; Yi-Jung Liu; Nan-Yi Huang; Kuo-Hui Yu; Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Chong-Yi Lee; Wen-Chau Liu;
國立高雄師範大學	2008	Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Wen-Chau Liu;Der-Feng Guo;Yu-Chi Kang;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝

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