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Institution	Date	Title	Author
國立臺灣海洋大學	2005	Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
義守大學	2004-06	Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications	Hung-Ming Chuang ; Shen -Fu, T. ; Kong-Beng Thei ; Po-Hsien Lai ; Ssu-I Fu ; Yan-Ying Tsai ; Wen-Chau Liu ;
義守大學	2004	Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)	Chun-Yuan Chen ; Chii-Maw Uang ; Shiou-Ying Cheng ; Hung-Ming Chuang ; Ssu-I Fu ; Ching-Hsiu Tsai ; Chi-Yuan Chang ; Wen-Chau Liu
國立高雄師範大學	2001	On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations	Jung-Hui Tsai;Wen-Chau Liu;Kuo-Hui Yu;Kun-Wei Lin;Cheng-Zu Wu;Kuan-Po Lin;Chih-Hung Y; 蔡榮輝
國立高雄師範大學	2001	Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures	Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor	Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	A new wide voltage operation regime double heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Superlatticed negative differential-resistance heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)	Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure	Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1998	Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)	Jung-Hui Tsai;Po-Hung Lin;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;W. L. Chang; 蔡榮輝
國立高雄師範大學	1997	Investigation of step-doped channel heterostructure field-effect transistor	Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors	Jung-Hui Tsai;Wen-Shiung Lour;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1997	InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Po-Hung Lin;Jing-Yuh Chen;Wei-Chou Wang; 蔡榮輝
國立高雄師範大學	1997	InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1997	Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學	1997	Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer	Jung-Hui Tsai;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure	Jung-Hui Tsai;Hui-Jung Shih;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT’s) with multiple carrier confinement heterostructures	Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學	1997	Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT’s)	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wei-Chou Wang;Jing-Yuh Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application	Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1997	Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors	Jung-Hui Tsai;Chin-Chuan Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1997	Multiple Negative-Differential-Resistance (MNDR) of a Graded-AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs Base Structure	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996-06	Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs structure	Jung-Hui Tsai;Lih-Wen Laih;Wen-Chau Liu;Wei-Chou Hsu;Yuan-Tzu Ting;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1996-03	Characteristics of camel-gate structures with active doping channel profiles	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Rong-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	On the recombination currents effect of heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Lih-Wen Laih;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1996	AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET's	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Jung-Hui Tsai;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's)	Jung-Hui Tsai;Kong-Beng Thei;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1996	High-performance camel-gate field effect transistor using high-medium-low doped structure	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Influence of channel doping-profile on camel-gate field-effect transistors	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Multiple negative-differential-resistance (NDR) of InGaAp/GaAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1996	Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	Pseudomorphic step-doped-channel field-effect transistor (SDCFET)	Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	Investigation of step doped channel heterostructure field-effect transistor	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Jing-Yuh Chen;Wei-Chou Wang;Po-Hung Lin; 蔡榮輝
國立高雄師範大學	1996	A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT's)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;H. R. Chen;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng,; 蔡榮輝
國立高雄師範大學	1996	Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD	Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝
國立高雄師範大學	1996	Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1996	A new multiple negative-differential-resistance (MNDR) device with AlGaAs/step-graded InxGa1-xAs quantum well/GaAs structure	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	1996	A new heterostructure-base bipolar transistor with multiple negative-differential-resistance	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	1996	A new InGaP/GaAs DHBT with delta-sheet and application to power transistors	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	High-performance InGaP/GaAs single-heterojunction bipolar transistor by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1996	On the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped negative-differential-resistance	Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Kun-Wei Lin;Chin-Chuan Cheng;H. R. Chen; 蔡榮輝
國立高雄師範大學	1995-01	Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure	Jung-Hui Tsai;Lih-Wen Laih;Wen-Shiung Lour;Wen-Chau Liu;Cheng-Zu Wu;Kong-Beng Thei;Rong-Chau Liu; 蔡榮輝

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