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Institution	Date	Title	Author
國立臺灣海洋大學	2008	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立臺灣海洋大學	2008	Investigation of Field-Plate Gate on Heterojunction Doped-Channel Field Effect Transistors	Meng-Kai Hsu; Shao-Yen Chiu; Chung-Hsien Wu; Kang-Ping Liu; Jung-Hui Tsai; Wen-Shiung Lour
國立高雄師範大學	2007	Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs	Jung-Hui Tsai;Chien-Ming Li;Wen-Chau Liu;Der-Feng Guo;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment	Jung-Hui Tsai;Wei-Tien Chen;Hon-Rung Chen;Shao-Yen Chiu;Meng-Kai Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate	Jung-Hui Tsai;Meng-Kai Hsu;Hon-Rung Chen;Shao-Yen Chiu;Wei-Tien Chen;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立臺灣海洋大學	2007	Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立臺灣海洋大學	2007	Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch	Shao-Yen Chiu;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Wen-Chau Liu;Wen-Shiung Lour
國立臺灣海洋大學	2007	Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment	Shao-Yen Chiu;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour
國立臺灣海洋大學	2007	Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立臺灣海洋大學	2007	Emitter-Induced Gain Effects on Dual-Emitter Phototransistor as an Electrooptical Switch	Wei-Tien Chen;Hon-Rung Chen;Shao-Yen Chiu;Meng-Kai Hsu;Wen-Chau Liu;Wen-Shiung Lour
國立臺灣海洋大學	2006-07	Extrinsic base surface-passivated dual-emitter heterojunction phototransistors	Wei-Tien Chen;Hon-Rung Chen;Meng-Kai Hsu;Shao-Yen Chiu;Wen-Shiung Lour
國立高雄師範大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Jung-Hui Tsai;Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	High-performance InGaP/GaAs pnp d-doped heterojunction bipolar transistor	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Yu-Chi Kang; 蔡榮輝
國立臺灣海洋大學	2006	Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor with Biased Emitter and Heterojunction Phototransistor with Biased Base	Wei-Tien Chen;Hon-Rung Chen;Meng-Kai Hsu;Shao-Yen Chiu;Wen-Shiung Lour
國立臺灣海洋大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Jung-Hui Tsai;Wen-Chau Liu
國立臺灣海洋大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu
國立臺灣海洋大學	2005-06	Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface	Shih-Wei Tan;Hon-Ren Chen;Min-Yuan Chu;Wei-Tien Chen;An-Hung Lin;Meng-Kai Hsu;Tien-Sheng Lin;Wen-Shiung Lour
國立高雄師範大學	2005	InP/InGaAs resonant tunneling diode with six-route negative differential resistances	Jung-Hui Tsai;Yu-Chi Kang;Wen-Shiung Lour; 蔡榮輝
國立臺灣海洋大學	2005	Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
國立臺灣海洋大學	2005	Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation	Shih-Wei Tan;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;An-Hung Lin;Wen-Shiung Lour
國立臺灣海洋大學	2005	Three-Terminal Dual-Emitter Phototransistor with Both Voltage- and Power-Tunable Optical Gains	Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Shih-Wei Tan;Wen-Shiung Lour
國立高雄師範大學	2004	On the negative differential resistance of AlInAs/GaInAs delta-doped HEMT for logic application	Jung-Hui Tsai;King-Poul Zhu;Shih-Wei Tan;Wen-Shiung Lour; 蔡榮輝
國立臺灣海洋大學	2003-08-01	An Investigation of Direct-Current Characteristics of Composite-Emitter Heterojunction Bipolar Transistors	Shih-Wei Tan; Wei-Tien Chen; Min-Yuan Chu; Ming-Kwen Tsai; Ying-Jay Yang; Wen-Shiung Lour
國立臺灣海洋大學	2003-03	Improvements in Direct-Current Characteristics of Al0.45Ga0.55As/GaAs Digital-Graded Superlattice-Emitter Heterojunction Bipolar Transistors with Reduced Turn-On Voltage by Wet-Oxidation	Ming-Kwen Tsai; Shih-Wei Tan; Yen-Wei Wu; Wen-Shiung Lour; Ying-Jay Yang
國立臺灣海洋大學	2002-04-29	Effects of wet-oxidation treatment on Al0.45Ga0.55AsGaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage	Wen-Shiung Lour; Yen-Wei Wu; Shih-Wei Tan
國立高雄師範大學	1997	Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors	Jung-Hui Tsai;Wen-Shiung Lour;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1997	A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application	Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1996-03	Characteristics of camel-gate structures with active doping channel profiles	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Rong-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET's	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Jung-Hui Tsai;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's)	Jung-Hui Tsai;Kong-Beng Thei;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1996	High-performance camel-gate field effect transistor using high-medium-low doped structure	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Influence of channel doping-profile on camel-gate field-effect transistors	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Multiple negative-differential-resistance (NDR) of InGaAp/GaAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1996	Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng,; 蔡榮輝
國立高雄師範大學	1996	Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1996	A new heterostructure-base bipolar transistor with multiple negative-differential-resistance	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	1996	A new InGaP/GaAs DHBT with delta-sheet and application to power transistors	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	High-performance InGaP/GaAs single-heterojunction bipolar transistor by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1995-01	Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure	Jung-Hui Tsai;Lih-Wen Laih;Wen-Shiung Lour;Wen-Chau Liu;Cheng-Zu Wu;Kong-Beng Thei;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wei-Chou Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	Performances enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing n--GaAs/n+-In0.2Ga0.8As two-layer structure	Jung-Hui Tsai;Wen-Chau Liu;Wei-Chou Hsu;Lih-Wen Laih;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor	Jung-Hui Tsai;Wen-Chau Liu;Wei-Chou Hsu;Lih-Wen Laih;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	MBE grown GaAs tri-step doping channel camel-gate FET	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Rong-Chau Liu; 蔡榮輝

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