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机构 日期 题名 作者
臺大學術典藏 2018-09-10T04:51:57Z In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:57Z In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma processing of GaAs and AlGaAs Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma processing of GaAs and AlGaAs Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z GaAs surface reconstruction obtained using a dry process Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z GaAs surface reconstruction obtained using a dry process Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG

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