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| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
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Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
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Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
Showing items 1-3 of 3 (1 Page(s) Totally)
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