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| 臺大學術典藏 |
2018-09-10T04:12:58Z |
Dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
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Nathan, M.I.; Williamson, F.; Huang, C.C.; Wu, C.C.; Lu, S.S.; Lu, S.S. |
| 臺大學術典藏 |
2018-09-10T04:12:57Z |
High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy
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Wu, C.C.; Lu, S.S.; Lee, S.C.; Williamson, F.; Nathan, M.I.; SHEY-SHI LU |
| 國立臺灣大學 |
1992-04 |
DC characterization of GaInP/GaAs tunneling emitter bipolar transistors
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Lu, S.S.; Wu, C.C.; Huang, C.C.; Williamson, F.; Nathan, M.I. |
| 國立臺灣大學 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
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Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
| 臺大學術典藏 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
|
Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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