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"wong i h"的相關文件
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| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
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Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
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Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
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Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2020-06-16T06:33:18Z |
Ge gate-all-around FETs on Si
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Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T15:33:15Z |
Advanced germanium channel transistors (invited)
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Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T15:33:15Z |
Advanced germanium channel transistors (invited)
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Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
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Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
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Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
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Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H. |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
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Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H. |
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