臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
臺大學術典藏	2021-09-02T00:03:59Z	Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs	Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:57Z	Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence	Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications	Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2020-06-16T06:33:18Z	Ge gate-all-around FETs on Si	Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T15:33:15Z	Advanced germanium channel transistors (invited)	Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T15:33:15Z	Advanced germanium channel transistors (invited)	Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T15:23:22Z	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si	Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T15:23:22Z	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si	Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T15:23:22Z	Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel	Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H.
臺大學術典藏	2018-09-10T15:23:22Z	Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel	Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H.
臺大學術典藏	2018-09-10T15:23:22Z	In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement	CHEE-WEE LIU; Liu, C.W.; Lan, H.-S.; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Shieh, T.-C.;Lin, T.-Y.;Lan, H.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.
臺大學術典藏	2018-09-10T15:23:22Z	In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement	CHEE-WEE LIU; Liu, C.W.; Lan, H.-S.; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Shieh, T.-C.;Lin, T.-Y.;Lan, H.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.
臺大學術典藏	2018-09-10T14:58:05Z	Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs	Wong, I.-H.;Chen, Y.-T.;Yan, J.-Y.;Ciou, H.-J.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T14:58:05Z	Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs	Wong, I.-H.;Chen, Y.-T.;Yan, J.-Y.;Ciou, H.-J.;Chen, Y.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:48:16Z	Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness	CHEE-WEE LIU; Liu, C.W.; Hu, C.; Luo, S.-J.; Wong, I.-H.; Chang, H.-C.; Lin, C.-M.; Lin, C.-M.;Chang, H.-C.;Wong, I.-H.;Luo, S.-J.;Liu, C.W.;Hu, C.
臺大學術典藏	2018-09-10T09:48:16Z	Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness	CHEE-WEE LIU; Liu, C.W.; Hu, C.; Luo, S.-J.; Wong, I.-H.; Chang, H.-C.; Lin, C.-M.; Lin, C.-M.;Chang, H.-C.;Wong, I.-H.;Luo, S.-J.;Liu, C.W.;Hu, C.
臺大學術典藏	2018-09-10T09:48:15Z	Radiation impact of EUV on high-performance Ge MOSFETs	Chen, Y.-T.;Chang, H.-C.;Wong, I.-H.;Sun, H.-C.;Ciou, H.-J.;Yeh, W.-T.;Luo, S.-J.;Liu, C.W.; Chen, Y.-T.; Chang, H.-C.; Wong, I.-H.; Sun, H.-C.; Ciou, H.-J.; Yeh, W.-T.; Luo, S.-J.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:48:15Z	Radiation impact of EUV on high-performance Ge MOSFETs	Chen, Y.-T.;Chang, H.-C.;Wong, I.-H.;Sun, H.-C.;Ciou, H.-J.;Yeh, W.-T.;Luo, S.-J.;Liu, C.W.; Chen, Y.-T.; Chang, H.-C.; Wong, I.-H.; Sun, H.-C.; Ciou, H.-J.; Yeh, W.-T.; Luo, S.-J.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:48:15Z	Mobility strain response and low temperature characterization of Ge p-MOSFETs	Wong, I.-H.;Chen, Y.-T.;Ciou, H.-J.;Chen, Y.-S.;Yan, J.-Y.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Ciou, H.-J.; Chen, Y.-S.; Yan, J.-Y.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:48:15Z	Mobility strain response and low temperature characterization of Ge p-MOSFETs	Wong, I.-H.;Chen, Y.-T.;Ciou, H.-J.;Chen, Y.-S.;Yan, J.-Y.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Ciou, H.-J.; Chen, Y.-S.; Yan, J.-Y.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:22:34Z	Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ?43, ?2×10^-3 A/cm² gate leakage, SS =85 mV/dec, Ion/Ioff =6×10⁵, and high strain response	Chang, H.-C.; Chen, Y.-T.; Wong, I.-H.; Lan, H.-S.; Luo, S.-J.; Lin, J.-Y.; Tseng, Y.-J.; Liu, C.W.; Hu, C.; Yang, F.-L.; Lin, C.-M.; CHEE-WEE LIU et al.

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