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| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ?43, ?2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response
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Chang, H.-C.; Chen, Y.-T.; Wong, I.-H.; Lan, H.-S.; Luo, S.-J.; Lin, J.-Y.; Tseng, Y.-J.; Liu, C.W.; Hu, C.; Yang, F.-L.; Lin, C.-M.; CHEE-WEE LIU et al. |
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