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Institution Date Title Author
國立交通大學 2014-12-08T15:33:42Z Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.
國立交通大學 2014-12-08T15:20:42Z Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q.
國立交通大學 2014-12-08T15:06:33Z The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.

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