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Showing items 1-13 of 13 (1 Page(s) Totally)
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| 臺大學術典藏 |
2020-03-06T03:40:37Z |
Understanding and managing international product launch: A comparison between developed and emerging markets
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Lee Y.;Lin B.-W.;Wong Y.-Y.;Calantone R.J.; Lee Y.; Lin B.-W.; Wong Y.-Y.; Calantone R.J.; BOU-WEN LIN |
| 國立交通大學 |
2019-04-03T06:47:54Z |
Study of the thermal property of copper oxide nanowires
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Dee, C. F.; Wong, Y. Y.; Lim, K. P.; Majlis, B. Y. |
| 國立交通大學 |
2019-04-02T06:04:25Z |
Growth Parameters Optimization of GaN High Electron Mobility Transistor Structure on Silicon Carbide Substrate
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Wong, Y. Y.; Huang, S. C.; Huang, W. C.; Lumbantoruan, F.; Chiu, Y. S.; Wang, H. C.; Yu, H. W.; Chang, E. Y. |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes
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Yu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C. |
| 國立交通大學 |
2019-04-02T05:58:46Z |
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
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Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2019-04-02T05:57:57Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 國立成功大學 |
2017 |
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
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Hsiao, C.-J.;Ha, M.-T.-H.;Liu, C.-K.;Nguyen, H.-Q.;Yu, H.-W.;Chang, S.-P.;Wong, Y.-Y.;Maa, J.-S.;Chang, S.-J.;Chang, E.Y. |
| 國立交通大學 |
2014-12-08T15:38:19Z |
Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodes
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Yu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C. |
| 國立交通大學 |
2014-12-08T15:36:26Z |
Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
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Liu, S. C.; Wong, Y. Y.; Lin, Y. C.; Chang, E. Y. |
| 國立交通大學 |
2014-12-08T15:36:26Z |
Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT
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Wong, Y. -Y.; Chang, E. Y.; Chen, Y. -K.; Liu, S. -C.; Lin, Y. -C.; Ma, J. -S. |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
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Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:20:42Z |
Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
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Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. |
| 國立交通大學 |
2014-12-08T15:06:33Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
Showing items 1-13 of 13 (1 Page(s) Totally)
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