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Showing items 1-25 of 51 (3 Page(s) Totally)
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| 國立交通大學 |
2020-02-02T23:54:39Z |
Low resistive InGaN film grown by metalorganic chemical vapor deposition
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Shrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:40:49Z |
Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition
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Yu, Hung-Wei; Wang, Tsun-Ming; Nguyen, Hong-Quan; Wong, Yuen-Yee; Tu, Yung-Yi; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:19Z |
The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.
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Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:19Z |
Growth and Fabrication of AlGaN/GaN HEMT on SiC Substrate
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Wong, Yuen-Yee; Chiu, Yu-Sheng; Luong, Tien-Tung; Lin, Tai-Ming; Ho, Yen-Teng; Lin, Yue-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:18Z |
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
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Hai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu |
| 國立交通大學 |
2019-04-02T06:04:17Z |
The Parasitic Reaction During the MOCVD Growth of AlInN Material
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Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kusan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2019-04-02T05:59:42Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
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Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2019-04-02T05:58:51Z |
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents
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Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
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Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
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Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD
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Luong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:56:26Z |
Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
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Wu, Yue-Han; Wong, Yuen-Yee; Chen, Wei-Chun; Tsai, Dung-Sheng; Peng, Chun-Yen; Tian, Jr-Sheng; Chang, Li; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
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Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
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Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L. |
| 國立交通大學 |
2017-04-21T06:55:17Z |
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
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Hsiao, Chih-Jen; Minh-Thien-Huu Ha; Liu, Chun-Kuan; Hong-Quan Nguyen; Yu, Hung-Wei; Chang, Sheng-Po; Wong, Yuen-Yee; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:17Z |
Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
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Wu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T08:30:58Z |
The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)
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Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi |
| 國立交通大學 |
2015-05-12T02:59:50Z |
GaN-containing semiconductor structure
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CHANG Yi; WONG Yuen Yee; HSIEH Chi Feng |
| 國立交通大學 |
2014-12-16T06:15:23Z |
Method for reducing defects in epitaxially grown on the group III-nitride materials
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Chang Edward Yi; Wong Yuen Yee |
Showing items 1-25 of 51 (3 Page(s) Totally)
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