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显示项目 11-20 / 51 (共6页)
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机构 日期 题名 作者
國立交通大學 2018-08-21T05:54:28Z Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi
國立交通大學 2018-08-21T05:53:36Z Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD Luong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi
國立交通大學 2017-04-21T06:56:26Z Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy Wu, Yue-Han; Wong, Yuen-Yee; Chen, Wei-Chun; Tsai, Dung-Sheng; Peng, Chun-Yen; Tian, Jr-Sheng; Chang, Li; Chang, Edward Yi
國立交通大學 2017-04-21T06:56:17Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:56:07Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:58Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:49Z Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi
國立交通大學 2017-04-21T06:55:41Z Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:41Z The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.
國立交通大學 2017-04-21T06:55:17Z Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition Hsiao, Chih-Jen; Minh-Thien-Huu Ha; Liu, Chun-Kuan; Hong-Quan Nguyen; Yu, Hung-Wei; Chang, Sheng-Po; Wong, Yuen-Yee; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi

显示项目 11-20 / 51 (共6页)
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