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Showing items 11-35 of 51 (3 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:54:28Z |
Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
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Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD
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Luong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:56:26Z |
Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
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Wu, Yue-Han; Wong, Yuen-Yee; Chen, Wei-Chun; Tsai, Dung-Sheng; Peng, Chun-Yen; Tian, Jr-Sheng; Chang, Li; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
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Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
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Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L. |
| 國立交通大學 |
2017-04-21T06:55:17Z |
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
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Hsiao, Chih-Jen; Minh-Thien-Huu Ha; Liu, Chun-Kuan; Hong-Quan Nguyen; Yu, Hung-Wei; Chang, Sheng-Po; Wong, Yuen-Yee; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:17Z |
Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
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Wu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T08:30:58Z |
The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)
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Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi |
| 國立交通大學 |
2015-05-12T02:59:50Z |
GaN-containing semiconductor structure
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CHANG Yi; WONG Yuen Yee; HSIEH Chi Feng |
| 國立交通大學 |
2014-12-16T06:15:23Z |
Method for reducing defects in epitaxially grown on the group III-nitride materials
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Chang Edward Yi; Wong Yuen Yee |
| 國立交通大學 |
2014-12-12T01:23:43Z |
以電漿輔助式分子束磊晶成長應用於高電子遷移率電晶體之氮化鋁鎵/氮化鎵異質結構
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黃延儀; Wong, Yuen-Yee; 張翼; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:47:56Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
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Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
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Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
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Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
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Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:33:00Z |
Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
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Wong, Yuen-Yee; Chen, Yu-Kong; Maa, Jer-Shen; Yu, Hung-Wei; Tu, Yung-Yi; Dee, Chang-Fu; Yap, Chi-Chin; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:04Z |
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
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Trinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:29:33Z |
Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
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Huang, Wei-Ching; Chang, Edward-Yi; Wong, Yuen-Yee; Lin, Kung-Liang; Hsiao, Yu-Lin; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:23:27Z |
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
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Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi |
Showing items 11-35 of 51 (3 Page(s) Totally)
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