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机构 日期 题名 作者
國立交通大學 2016-03-28T00:04:17Z Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor Wu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi
國立交通大學 2015-12-02T02:59:20Z Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung
國立交通大學 2015-07-21T08:30:58Z The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs) Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi
國立交通大學 2015-05-12T02:59:50Z GaN-containing semiconductor structure CHANG Yi; WONG Yuen Yee; HSIEH Chi Feng
國立交通大學 2014-12-16T06:15:23Z Method for reducing defects in epitaxially grown on the group III-nitride materials Chang Edward Yi; Wong Yuen Yee
國立交通大學 2014-12-12T01:23:43Z 以電漿輔助式分子束磊晶成長應用於高電子遷移率電晶體之氮化鋁鎵/氮化鎵異質結構 黃延儀; Wong, Yuen-Yee; 張翼; Chang, Edward Yi
國立交通大學 2014-12-08T15:47:56Z Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh
國立交通大學 2014-12-08T15:36:59Z Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin
國立交通大學 2014-12-08T15:36:58Z Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei
國立交通大學 2014-12-08T15:36:45Z Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung

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