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| 中山醫學大學 |
2023-04 |
Is OLP potentially malignant? A clue from ZNF582 methylation
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Chiu, Yu-Wei;Su, Yee-Fun;Yang, Cheng-Chieh;Liu, Chung-Ji;Chen, Yi-Ju;Cheng, Han-Chieh;Wu, Cheng-Hsien;Chen, Pei-Yin;Lee, Yu-Hsien;Chen, Yen-Lin;Chen, Yi-Tzu;Peng, Chih-Yu;Lu, Ming-Yi;Yu, Chuan-Hang;Kao, Shou-Yen;Fwu, Chyng-Wen;Huang, Yu-Feng |
| 南華大學 |
2022 |
防火宣導對避難弱勢容留機構的減災成效－以嘉義市為例
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吳正賢; WU, CHENG-HSIEN |
| 淡江大學 |
2021-12-10 |
Design Criteria for Patient-specific Mandibular Continuity Defect Reconstructed Implant with Lightweight Structure using Weighted Topology Optimization and Validated with Biomechanical Fatigue Testing
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Lin, Chun-Li;Wang, Yu-Tzu;Chang, Chun-Ming;Wu, Cheng-Hsien;Tsai, Wei-Heng |
| 國立交通大學 |
2020-10-05T02:01:07Z |
Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
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Lin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:09:52Z |
The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode
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Lin, Shih-Kai; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Chang, Jing-Shuen; Wu, Cheng-Hsien; Tseng, Yi-Ting; Xu, You-Lin; Huang, Kai-Lin; Sun, Li-Chuan; Zhang, Yong-Ci; Chiu, Yu-Ju; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:42Z |
Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
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Lee, Ling; Fan, Wen-Chung; Ku, Jui-Tai; Chang, Wen-Hao; Chen, Wei-Kuo; Chou, Wu-Ching; Ko, Chih-Hsin; Wu, Cheng-Hsien; Lin, You-Ru; Wann, Clement H.; Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:06Z |
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
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Du, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
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Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
Showing items 1-10 of 52 (6 Page(s) Totally)
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