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"wu cheng ming"
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| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
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Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.; Cheng, Y.-C.; Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer,; reas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG; Yang, Jer-Ren |
| 東吳大學 |
2017 |
高科技產業對專利權邊境保護措施之因應策略
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吳政旻; WU, CHENG-MING |
| 國立臺灣大學 |
2004 |
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
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Cheng, Yung-Chen; Lin, En-Chiang; Chen, Meng-Kuo; Wu, Cheng-Ming; Yang, C.C.; Ma, Kung-Jen |
| 國立臺灣大學 |
2004 |
具有不同界面層之氮化銦鎵/氮化鎵多重量子井及氧化鋅奈米結構之穿透式電子顯微術分析研究
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吳政珉; Wu, Cheng-Ming |
| 國立臺灣大學 |
2004 |
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
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Cheng, Yung-Chen; Wu, Cheng-Ming; Chen, Meng-Kuo; Yang, C. C.; Feng, Zhe-Chuan; Li, Gang Alan; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Je |
| 國立臺灣大學 |
2004 |
Nanostructures and Carrier Localization Behaviors of Green-luminescence InGaN/GaN Quantum-well Structures of Various Silicon-doping Conditions
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Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn |
| 臺大學術典藏 |
2004 |
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
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Cheng, Yung-Chen; Wu, Cheng-Ming; Chen, Meng-Kuo; Yang, C. C.; Feng, Zhe-Chuan; Li, Gang Alan; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Je; Cheng, Yung-Chen; Wu, Cheng-Ming; Chen, Meng-Kuo; Yang, C. C.; Feng, Zhe-Chuan; Li, Gang Alan; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Je |
| 國立臺灣大學 |
2003-12 |
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
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Tang, Tsung-Yi; Teng, Chih-Chung; Lin, Shih-Chun; Lin, En-Chiang; Chen, Meng-Ku; Wu, Cheng-Ming; Chen, Jiun-Yang; Cheng, Yung-Chen; Feng, Shih-Wei; Yang, C.C. |
Showing items 1-8 of 8 (1 Page(s) Totally)
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