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"wu chia hsun"的相关文件
显示项目 1-28 / 28 (共1页)
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| 元智大學 |
Sep-21 |
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V-th Stability by Field Plate Engineering
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李清庭; Wu, Jui-Sheng; Lee, Chih-Chieh; Wu, Chia-Hsun; Kao, Min-Lu; Weng, You-Chen; Yang, Chih-Yi; Luc, Quang Ho; Ueda, Daisuke; Chang, Edward Yi |
| 國立交通大學 |
2020-10-05T02:00:29Z |
High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique
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Wu, Chia-Hsun; Chang, Edward Yi; Lee, Ming-Wen; Wu, Jui-Sheng; Yang, Chih-Yi; Han, Ping-Cheng |
| 國立交通大學 |
2020-05-05T00:01:32Z |
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
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Chang, Edward Yi; Chien, Chao Hsin; Iwai, Hiroshi; Tsutsui, Kazuo; Kakushima, Kuniyuki; Nagarajan, Venkatesan; Hsu, Heng-Tung; Yao, Jing Neng; Wu, Chia-Hsun; Lee, Jin Hwa; Hsu, Chia Chieh; Lin, Yueh-Chin; Lin, Jia-Ching; Huang, Kuan Ning |
| 國立交通大學 |
2019-10-05T00:09:47Z |
Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
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Han, Ping-Cheng; Wu, Chia-Hsun; Ho, Yu-Hsuan; Yan, Zong-Zheng; Chang, Edward Yi |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applications
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Wu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:46Z |
High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
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Wang, Huan-Chung; Lumbantoruan, Franky Juanda; Hsieh, Ting-En; Wu, Chia-Hsun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
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Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:35Z |
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
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Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:21Z |
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
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Lin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:04Z |
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
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Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:50Z |
Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT
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Lumbantoruan, Franky; Wu, Chia-Hsun; Zheng, Xia-Xi; Singh, Sankalp K.; Dee, Chang-Fu; Majlis, Burhanuddin Y.; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
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Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-06-21 |
Halbleitervorrichtung und Verfahren zur Herstellung derselben
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Hsieh, Ting-En; Lin, Yueh-Chin; Han, Ping-Cheng; Wu, Chia-Hsun; Huang, Chung-Kai; Liu, Shih-Chien; Chang, Edward Yi; HSIEH TING-EN; LIN YUEH-CHIN; HAN PING-CHENG; WU CHIA-HSUN; HUANG CHUNG-KAI; LIU SHIH-CHIEN; CHANG EDWARD YI |
| 臺北醫學大學 |
2018 |
A Spatial Multilevel Analysis of Intimate Partner Violence against Women in the Democratic Republic of the Congo
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Wu, Chia-Hsun; 吳佳洵 |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
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Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立成功大學 |
2016-08-30 |
PVDF壓力感測器陣列之研製及脈衝式微爆震管中震波傳遞之量測
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吳佳勳; Wu, Chia-Hsun |
| 國立成功大學 |
2016-07-20 |
PVDF壓力感測器陣列之研製及脈衝式微爆震管中震波傳遞之量測
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吳佳勳; Wu, Chia-Hsun |
| 國立交通大學 |
2014-12-08T15:22:03Z |
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
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Hsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 亞洲大學 |
2010-06 |
Detection of a balanced homologous acrocentric rearrangement rea(14q14q) and low-grade X-chromosome mosaicism in a couple with repeated pregnancy losses
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陳持平;Chen, Chih-Ping;Chern, Schu-Rern;Wu, Chia-Hsun;Tsai, Fuu-Jen;Wu, Pei-Chen;Wang, Wayseen |
| 國立成功大學 |
2010-05-30 |
服務缺失歸因對顧客反應和滿意度的影響，以補救表現為干擾因子
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吳嘉訓; Wu, Chia-Hsun |
| 國立臺灣大學 |
2006 |
相關性編碼正交分頻多工系統之次載波間相互干擾之研究
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吳佳勳; Wu, Chia-Hsun |
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