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显示项目 256-305 / 607 (共13页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:18:00Z The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers Cheng, HM; Hsu, HC; Yang, S; Wu, CY; Lee, YC; Lin, LJ; Hsieh, WF
國立交通大學 2014-12-08T15:17:33Z Structural and optical properties of ZnO nanosaws Wu, CY; Hsu, HC; Cheng, HM; Yang, S; Hsieh, WF
國立交通大學 2014-12-08T15:17:22Z Orbital susceptibilities of PbSe quantum dots Jian, WB; Lu, WG; Fang, JY; Chiang, SJ; Lan, MD; Wu, CY; Wu, ZY; Chen, FR; Kai, JJ
國立交通大學 2014-12-08T15:17:05Z Luminescence of selective area growth of epitaxial ZnO nanowires and random-growth-oriented nanobelts Hsu, HC; Cheng, HM; Wu, CY; Huang, HS; Lee, YC; Hsieh, WF
國立交通大學 2014-12-08T15:16:39Z Design and fabrication of a photosensing nanodevice structure with CdSe and Au nanoparticles on a silicon chip Tu, CC; Li, YK; Chen, TM; Wu, CY
國立交通大學 2014-12-08T15:16:36Z Discovery of different types of inhibition between the human and Thermotoga maritima alpha-fucosidases by fuconojirimycin-based derivatives Ho, CW; Lin, YN; Chang, CF; Li, ST; Wu, YT; Wu, CY; Liu, SW; Li, YK; Lin, CH
國立交通大學 2014-12-08T15:07:11Z PREPARATION OF BARIUM-TITANATE FILMS ON SILICON BY ELECTRON-BEAM EVAPORATION TECHNIQUES WU, CY; SEN, WZ
國立交通大學 2014-12-08T15:06:32Z NEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFET WU, CY; LAI, KN
國立交通大學 2014-12-08T15:06:31Z INTEGRATED ALPHA-TYPE DIFFERENTIAL NEGATIVE-RESISTANCE MOSFET DEVICE WU, CY; LAI, KN
國立交通大學 2014-12-08T15:06:30Z A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTOR WU, CY; SHENG, HD
國立交通大學 2014-12-08T15:06:30Z ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODES WU, CY
國立交通大學 2014-12-08T15:06:29Z THEORETICAL AND EXPERIMENTAL CHARACTERIZATION OF THE DUAL-BASE TRANSISTOR (DUBAT) WU, CY
國立交通大學 2014-12-08T15:06:29Z CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES WU, CY
國立交通大學 2014-12-08T15:06:29Z THE OPEN-CIRCUIT VOLTAGE OF BACK-SURFACE-FIELD (BSF) P-N-JUNCTION SOLAR-CELLS IN CONCENTRATED SUNLIGHT WU, CY; SHEN, WZ
國立交通大學 2014-12-08T15:06:28Z INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES WU, CY
國立交通大學 2014-12-08T15:06:28Z BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER WU, CY
國立交通大學 2014-12-08T15:06:28Z CURRENT GAIN OF THE BIPOLAR-TRANSISTOR WU, CY
國立交通大學 2014-12-08T15:06:28Z AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR WU, CY
國立交通大學 2014-12-08T15:06:28Z GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET) WU, CY; LAI, KN
國立交通大學 2014-12-08T15:06:27Z AN ANALYTICAL MODEL FOR HIGH-LOW-EMITTER (HLE) SOLAR-CELLS IN CONCENTRATED SUNLIGHT SHEN, WZ; WU, CY
國立交通大學 2014-12-08T15:06:27Z BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE-LAYER WU, CY
國立交通大學 2014-12-08T15:06:26Z THE NEW GENERAL REALIZATION-THEORY OF FET-LIKE INTEGRATED VOLTAGE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES WU, CY
國立交通大學 2014-12-08T15:06:26Z CHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT) WU, CY
國立交通大學 2014-12-08T15:06:25Z DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS WU, CY; CHEN, JF
國立交通大學 2014-12-08T15:06:25Z THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES WU, CY
國立交通大學 2014-12-08T15:06:24Z INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE WU, CY
國立交通大學 2014-12-08T15:06:23Z OXIDATION RESISTANCE CHARACTERISTICS OF SILICON THERMAL NITRIDE FILMS WU, CY; KING, CW; LEE, MK; CHEN, CT; SHIH, CT
國立交通大學 2014-12-08T15:06:23Z TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLS WU, CY; CHEN, JF
國立交通大學 2014-12-08T15:06:23Z GROWTH-KINETICS OF SILICON THERMAL NITRIDATION WU, CY; KING, CW; LEE, MK; CHEN, CT
國立交通大學 2014-12-08T15:06:22Z A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION WU, CY; CHANG, MC; SHEY, AJ
國立交通大學 2014-12-08T15:06:22Z A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR WU, CY; LIU, YF
國立交通大學 2014-12-08T15:06:21Z A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR WU, CY; LEE, CS
國立交通大學 2014-12-08T15:06:21Z THE EFFECT OF THE MINORITY-CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFET WU, CY; CHIEN, HC
國立交通大學 2014-12-08T15:06:20Z A NEW INTERNAL OVERVOLTAGE PROTECTION STRUCTURE FOR THE BIPOLAR POWER TRANSISTOR WU, CY
國立交通大學 2014-12-08T15:06:19Z A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE WU, CY
國立交通大學 2014-12-08T15:06:19Z A NEW COMPUTER-AIDED SIMULATION-MODEL FOR POLYCRYSTALLINE SILICON FILM RESISTORS WU, CY; KEN, WD
國立交通大學 2014-12-08T15:06:17Z AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI WU, CY; YANG, SY; CHEN, HH; TSENG, FC; SHIH, CT
國立交通大學 2014-12-08T15:06:16Z THE METAL-INSULATOR-SEMICONDUCTOR-SWITCH (MISS) DEVICE USING THERMAL NITRIDE FILM AS THE TUNNELING INSULATOR WU, CY; HUANG, YT
國立交通大學 2014-12-08T15:06:15Z AN EFFICIENT TIMING MODEL FOR CMOS COMBINATIONAL LOGIC GATES WU, CY; HWANG, JS; CHANG, C; CHANG, CC
國立交通大學 2014-12-08T15:06:15Z A NEW APPROACH TO MODEL CMOS LATCHUP WU, CY; YANG, YH; CHANG, C; CHANG, CC
國立交通大學 2014-12-08T15:06:15Z A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI WU, CY; HSIAO, WZ; CHEN, HH
國立交通大學 2014-12-08T15:06:15Z A NEW METHOD FOR COMPUTER-AIDED OPTIMIZATION OF SOLAR-CELL STRUCTURES CHEN, MJ; WU, CY
國立交通大學 2014-12-08T15:06:15Z A STRUCTURE-ORIENTED MODEL FOR DETERMINING THE SUBSTRATE SPREADING RESISTANCE IN BULK CMOS LATCH-UP PATHS AND ITS APPLICATION IN HOLDING CURRENT PREDICTION CHEN, MJ; WU, CY
國立交通大學 2014-12-08T15:06:13Z THE LAMBDA-BIPOLAR PHOTOTRANSISTOR ANALYSIS AND APPLICATIONS WU, CY; SHENG, HD; TSAI, YT
國立交通大學 2014-12-08T15:06:13Z AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI WU, CY; HUANG, GS; CHEN, HH; TSENG, FC; SHIH, CT
國立交通大學 2014-12-08T15:06:13Z AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION WU, CY; DAIH, YW
國立交通大學 2014-12-08T15:06:13Z A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS WU, CY; HSU, KC
國立交通大學 2014-12-08T15:06:13Z MOBILITY MODELS FOR THE IV CHARACTERISTICS OF BURIED-CHANNEL MOSFETS WU, CY; HSU, KC
國立交通大學 2014-12-08T15:06:12Z SUPERIOR CHARACTERISTICS OF NITRIDIZED THERMAL OXIDE GROWN ON POLYCRYSTALLINE SILICON CHEN, CF; WU, CY
國立交通大學 2014-12-08T15:06:11Z AN EFFICIENT METHOD FOR CALCULATING THE DC TRIGGERING CURRENTS IN CMOS LATCH-UP CHEN, MJ; WU, CY

显示项目 256-305 / 607 (共13页)
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