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"wu cy"的相关文件
显示项目 271-295 / 607 (共25页)
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每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:06:28Z |
BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:28Z |
CURRENT GAIN OF THE BIPOLAR-TRANSISTOR
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:28Z |
AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:28Z |
GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET)
|
WU, CY; LAI, KN |
| 國立交通大學 |
2014-12-08T15:06:27Z |
AN ANALYTICAL MODEL FOR HIGH-LOW-EMITTER (HLE) SOLAR-CELLS IN CONCENTRATED SUNLIGHT
|
SHEN, WZ; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:27Z |
BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE-LAYER
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:26Z |
THE NEW GENERAL REALIZATION-THEORY OF FET-LIKE INTEGRATED VOLTAGE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:26Z |
CHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT)
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:25Z |
DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS
|
WU, CY; CHEN, JF |
| 國立交通大學 |
2014-12-08T15:06:25Z |
THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:24Z |
INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:23Z |
OXIDATION RESISTANCE CHARACTERISTICS OF SILICON THERMAL NITRIDE FILMS
|
WU, CY; KING, CW; LEE, MK; CHEN, CT; SHIH, CT |
| 國立交通大學 |
2014-12-08T15:06:23Z |
TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLS
|
WU, CY; CHEN, JF |
| 國立交通大學 |
2014-12-08T15:06:23Z |
GROWTH-KINETICS OF SILICON THERMAL NITRIDATION
|
WU, CY; KING, CW; LEE, MK; CHEN, CT |
| 國立交通大學 |
2014-12-08T15:06:22Z |
A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION
|
WU, CY; CHANG, MC; SHEY, AJ |
| 國立交通大學 |
2014-12-08T15:06:22Z |
A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR
|
WU, CY; LIU, YF |
| 國立交通大學 |
2014-12-08T15:06:21Z |
A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR
|
WU, CY; LEE, CS |
| 國立交通大學 |
2014-12-08T15:06:21Z |
THE EFFECT OF THE MINORITY-CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFET
|
WU, CY; CHIEN, HC |
| 國立交通大學 |
2014-12-08T15:06:20Z |
A NEW INTERNAL OVERVOLTAGE PROTECTION STRUCTURE FOR THE BIPOLAR POWER TRANSISTOR
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:19Z |
A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE
|
WU, CY |
| 國立交通大學 |
2014-12-08T15:06:19Z |
A NEW COMPUTER-AIDED SIMULATION-MODEL FOR POLYCRYSTALLINE SILICON FILM RESISTORS
|
WU, CY; KEN, WD |
| 國立交通大學 |
2014-12-08T15:06:17Z |
AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI
|
WU, CY; YANG, SY; CHEN, HH; TSENG, FC; SHIH, CT |
| 國立交通大學 |
2014-12-08T15:06:16Z |
THE METAL-INSULATOR-SEMICONDUCTOR-SWITCH (MISS) DEVICE USING THERMAL NITRIDE FILM AS THE TUNNELING INSULATOR
|
WU, CY; HUANG, YT |
| 國立交通大學 |
2014-12-08T15:06:15Z |
AN EFFICIENT TIMING MODEL FOR CMOS COMBINATIONAL LOGIC GATES
|
WU, CY; HWANG, JS; CHANG, C; CHANG, CC |
| 國立交通大學 |
2014-12-08T15:06:15Z |
A NEW APPROACH TO MODEL CMOS LATCHUP
|
WU, CY; YANG, YH; CHANG, C; CHANG, CC |
显示项目 271-295 / 607 (共25页)
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