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Showing items 51-55 of 55  (6 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2002-08 Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode Su, Yan-Kuin; Wu, Cheng-Hsien; Chang, Jia-Rong; Wu, Kuo-Ming; Wang, Hsin-Chuan; Chen, Wen-Bin; You, Shin-Jie; Chang, Shoou-Jinn
國立成功大學 2000-04 Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode Su, Yan-Kuin; Chang, Jia-Rong; Lu, Yan-Ten; Lin, Chuing-Liang; Wu, Kuo-Ming
國立成功大學 2000-04 Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature Su, Yan-Kuin; Chang, Jia-Rong; Lu, Chuing-Liang; Lin, Chuing-Liang; Wu, Kuo-Ming; Wu, Zheng-Xian
國立成功大學 1999-07-12 Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy Chang, J. R.; Su, Yan-Kuin; Lin, C. L.; Wu, Kuo-Ming; Huang, W. C.; Lu, Y. T.; Jaw, D. H.; Li, W. L.; Chen, Shi-Ming
國立成功大學 1999-06-07 High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy Chang, Jia-Rong; Su, Yan-Kuin; Lin, Chuing-Liang; Wu, Kuo-Ming; Lu, Yan-Ten; Jaw, D. H.; Shiao, H. P.; Lin, W.

Showing items 51-55 of 55  (6 Page(s) Totally)
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