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机构 日期 题名 作者
國立交通大學 2019-04-02T06:00:28Z Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:59:51Z High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:57Z Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:57:53Z High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:57:52Z Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen
東海大學 2018 都市身體改良場─前日本海軍無線電信所再利用計劃 吳銘基; Wu,Ming-Chi
中山醫學大學 2018 機器學習在磁振影像的應用研究 吳明基; Wu, Ming-Chi
中山醫學大學 2016-12 Effects of antidepressant therapy on white matter in patients with first-episode major depressive disorder Lee, Chun-Te;Lai, Te-Jen;Hsieh, Ming-Hong;Wu, Ming-Chi;Chang, Cheng-Chen
國立交通大學 2014-12-12T02:40:07Z 以電激發砷化鎵塊材為兆赫波增益介質之研究 吳明錡; Wu, Ming-Chi; 顏順通; Yen, Shun-Tung
國立交通大學 2014-12-12T01:27:27Z 氧化鋯電阻式記憶元件搭配場效電晶體之特性研究 吳明錡; Wu, Ming Chi; 曾俊元; Tseng, Tseung Yuen
國立交通大學 2014-12-08T15:48:37Z Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:29:05Z Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:28:51Z Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:40Z A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:21:34Z Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:18:12Z Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film Lin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:11:49Z High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:10:51Z Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:06:33Z High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學 2009 Nonpolar bistable resistive switchng behaviors of bismuth titanate oxide thin film 林群傑; Lin, Chun-Chieh; Lin, Meng-Han ; Wu, Ming-Chi ;Tseng, Tseung-Yuen
國立臺灣大學 2006 Development of a Multiplexed Interface for Capillary Electrophoresis?Electrospray Ion Trap Mass Spectrometry Li, Fu-An; Wu, Ming-Chi; Her, Guor-Rong

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